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In Stock. Can Ship Monday- Details

Samsung 990 Pro 2TB PCIe NVMe M.2 2280 Solid State Drive - SPECIAL PRICE OFFER

Save $130.35 off RRP
Samsung

Genuine NZ new item

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Today's Price:

$363.00 incl gst

Free Delivery

In Stock. Can Ship Monday- Details

Estimated Delivery Time

  • Auckland
    1 Day
  • North Island
    1-2 Days
  • South Island
    1-3 Days

Product Description:

Special Product Offer:

Purchase this item for a SPECIAL LOW PRICE. Orders must be processed by 3pm on 29th November 2024 to be eligible. T&Cs apply!

Samsung 990 Pro 2TB PCIe NVMe M.2 2280 Solid State Drive - SPECIAL PRICE OFFER

Experience long-lasting fast performance of PCIe 4.0. The in-house controller's smart heat control delivers supreme power efficiency while maintaining speed and performance to help keep you on the top of your game.

Features:

PCIe 4.0 speed Maximised:
Huge speed boost. Up to 40% and 55% faster random read/write speeds than 980 PRO - up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near max performance of PCIe 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.

Incredible Power Efficiency:
More power-efficient performance. Higher performance usually consumes more power. But 990 PRO uses less power with over 50% improved performance per Watt over 980 PRO³.This low-power design delivers outstanding PCIe 4.0 performance possible with optimal power efficiency.

Smart Thermal Solution:
Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm helps to manage heat for stable performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures stable.

The Champion Maker:
An amazing gameplay experience. Huge improvement in random performance enables faster loads for gaming realism on PS5 and DirectStorage PC games.

Specifications:

• Application: Client PCs, Game Consoles
• Rated Capacity: 2,000GB
• Form Factor: M.2 (2280)
• Interface: PCIe Gen 4.0 x4, NVMe 2.0
• Storage Memory: Samsung V-NAND 3-bit MLC
• Controller: Samsung in-house Controller
• Cache Memory: Samsung 2GB Low Power DDR4 SDRAM
• Sequential Read: Up to 7,450 MB/s
• Sequential Write: Up to 6,900 MB/s
• Random Read (4KB, QD32): Up to 1,400,000 IOPS
• Random Write (4KB, QD32): Up to 1,550,000 IOPS
• Random Read (4KB, QD1): Up to 22,000 IOPS
• Random Write (4KB, QD1): Up to 80,000 IOPS
• Dimension (W x H x D): 80 x 22 x 2.3 mm
• Weight: Max 9.0g

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